BLF647 datasheet(9/16 Pages) PHILIPS

9 / 16 page

2001 Nov 27

Philips Semiconductors

Product speciﬁcation

UHF power LDMOS transistor

BLF647

Application at 800 MHz

handbook, halfpage

(dB)

(%)

MGW543

100

200

300

PL (PEP) (W)

Fig.8

Power gain and drain efficiency as functions

of peak envelope load power; typical

values.

Th =25 °C; VDS = 32 V; IDQ =1A.

2-tone: f1 = 800 MHz (−6 dB); f2 = 800.1 MHz (−6 dB)

measured in 800 MHz test circuit.

handbook, halfpage

dim

(dBc)

100

200

300

PL (PEP) (W)

−20

−60

−80

−40

MGW544

Fig.9

Intermodulation distortion as a function of

peak envelope output power; typical values.

Th =25 °C; VDS = 32 V; IDQ =1A.

2-tone: f1 = 800 MHz (−6 dB); f2 = 800.1 MHz (−6 dB)

measured in 800 MHz test circuit.

handbook, halfpage

(dB)

(%)

100

150

200

PL (W)

MGW545

Fig.10 Power gain and drain efficiency as functions

of load power; typical values.

Th =25 °C; VDS = 32 V; IDQ = 1 A; CW, class-AB; f = 800 MHz;

measured in 800 MHz test circuit.

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