BLF647 datasheet(3/16 Pages) PHILIPS

3 / 16 page

2001 Nov 27

Philips Semiconductors

Product speciﬁcation

UHF power LDMOS transistor

BLF647

THERMAL CHARACTERISTICS

CHARACTERISTICS

Tj =25 °C per section unless otherwise speciﬁed.

Note

1. Capacitance values of the die only.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-mb

thermal resistance from junction to mounting base

Tmb =25 °C; Ptot = 290 W

0.6

K/W

Rth mb-h

thermal resistance from mounting base to heatsink

0.2

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)DSS

drain-source breakdown voltage

VGS = 0; ID = 1.4 mA

−−

VGSth

gate-source threshold voltage

VDS = 20 V; ID = 140 mA

−

5.5

IDSS

drain-source leakage current

VGS = 0; VDS =28V

−−

1.2

µA

IDSX

drain cut-off current

VGS =VGSth +9V; VDS =10V

−−

IGSS

gate leakage current

VGS = ±15 V; VDS =0

−−

gfs

forward transconductance

VDS = 20 V; ID =4A

−

RDSon

drain-source on-state resistance

VGS =VGSth +9V; ID =4A

−

160

−

Ω

Ciss

input capacitance

VGS =0; VDS = 28 V; f = 1 MHz;

note 1

−

Coss

output capacitance

VGS = 0; VDS = 28 V; f = 1 MHz

−

Crss

feedback capacitance

VGS = 0; VDS = 28 V; f = 1 MHz

−

handbook, halfpage

Coss

(pF)

030

VDS (V)

100

MGW546

Fig.2

Output capacitance as a function of

drain-source voltage; typical values per

section.

VGS = 0; f = 1 MHz; Tj =25 °C.

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