 2015 Microchip Technology Inc.

DS20005455A-page 3

HV582

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Rating†

Operating Junction Temperature............................................................................................................. -40°C to +125°C

Storage Temperature .............................................................................................................................. -65°C to +150°C

†Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions, above those

indicated in the operational listings of this specification, is not implied. Exposure to maximum rating conditions for

extended periods may affect device reliability. Device is ESD sensitive. Use appropriate ESD precaution.

RECOMMENDED OPERATING CONDITIONS

Parameter

Symbol

Min.

Typ.

Max.

Units

Conditions

Logic Supply Voltage

4.5

5.0

5.5

V

High-Voltage Supply

10

—

80

V

High-Level Input Voltage

—

V

Low-Level Input Voltage

0—

0.9

V

TABLE 1-1:

POWER SEQUENCES

Sequence Type

Steps

Power-Up Sequence

1.

Connect Ground.

2.

3.

Set All Inputs (Data, CLK, etc.) to a known state.

4.

Power-Down Sequence

Repeat the Power-Up sequence in reverse order.

DC ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Min.

Typ.

Max.

Units

Conditions

–

–

100

µA

–

–

100

µA

––

25

mA

LE = low

High-Level Output Voltage

70

75

–

V

Output P-Channel Body Diode

––

83

V

Low-Level Output Voltage

–5.0

10

V

Output N-Channel Body Diode

-3.0

–

–

V

Logic Input High Current

––

1.0

µA

10

30

50

RST and POL only

Note 1:

Specification is for design guidance only.