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DS2770BE/T Datasheet(PDF) 25 Page - Dallas Semiconductor |
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DS2770BE/T Datasheet(HTML) 25 Page - Dallas Semiconductor |
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25 / 27 page ![]() DS2770 25 of 27 UV Output Low IOL,UV\ VUV\ = 2V 5 10 mA 11 UV Output High VOH,UV\ IUV\ = 10 mAVP - 0.5V 10 CC Output Low IOL,CC\ VCC\ = 2V 5 10 mA 11 CC Output High VOH,CC\ ICC\ = 10 mAVP - 0.5V 10 Internal Current- Sense Resistance RSNS TA = 25°C 20 25 30 m W DQ Low to ISLEEP time tSLP 513 s ELECTRICAL CHARACTERISTICS: TEMPERATURE, VOLTAGE, CURRENT (0 °C to 50°C, 2.7V £ VDD £ 4.5V) PARAMETER SYMBOL CONDITION MIN TYP MAX UNITS NOTES Temperature Resolution TLSB 0.125 °C Temperature Error TERR ±3 °C 2 Voltage Resolution VLSB 4.88 mV Voltage Full Scale VFS 5V Voltage Offset Error VOERR 1LSb Voltage Gain Error VGERR ±1%VFS Current Resolution ILSB 62.5 1.56 mA mV 3, 13 4, 13 Current Full Scale IFS 2.048 51.2 A mV 3, 12, 13 4, 12, 13 Current Offset Error IOERR ±1LSb Current Gain Error IGERR ±3 ±1 %3,7 4 Accumulated Current Resolution qCA 250 6.25 mAhr mVhr 3, 13 4, 13 Timebase Accuracy tERR ±1 ±3 % 5 |
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