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LMH6533SP Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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LMH6533SP Datasheet(HTML) 3 Page - National Semiconductor (TI) |
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3 / 11 page ![]() +5V DC Electrical Characteristics (Continued) Unless otherwise specified, all limits guaranteed for T J = 25˚C, RL =10 Ω. Boldface limits apply at the temperature extremes. (Note 8) Symbol Parameter Conditions Min (Note 7) Typ (Note 6) Max (Note 7) Units I Swr Supply Current, Write Mode EN2 = EN3 = EN4 = High; (Note 12) I2=I3=I4=I R = 125 µA 182.5 210 mA I S Supply Current All Channels Disable, No Input Current. SELB = 0; R AA,RAB,RFA, R FB = ∞ 45 mA +5V AC Electrical Characteristics Unless otherwise specified, all limits guaranteed for T J = 25˚C, RL =10 Ω. Boldface limits apply at the temperature extremes. (Note 8) Symbol Parameter Conditions Min (Note 7) Typ (Note 6) Max (Note 7) Units t r Write Rise Time I OUT = 40 mA (Read) + 40 mA (10% to 90%) R LOAD =5 Ω 0.50 ns t f Write Fall Time I OUT = 40 mA (Read) + 40 mA (90% to 10%) R LOAD =5 Ω 0.76 ns t r Write Rise Time I OUT = 100 mA (Read) + 100 mA (10% to 90%) R LOAD =5 Ω 0.65 ns t f Write Fall Time I OUT = 100 mA (Read) + 100 mA (90% to 10%) R LOAD =5 Ω 0.75 ns t r Write Rise Time I OUT = 150 mA (Read) + 150 mA (10% to 90%) R LOAD =5 Ω 0.78 ns t f Write Fall Time I OUT = 150 mA (Read) + 150 mA (90% to 10%) R LOAD =5 Ω 0.77 ns OS Output Current Overshoot I OUT = 40 mA (Read) + 40 mA 16 % IN 0 Output Current Noise I OUT = 40 mA; RLOAD =50 Ω; f = 10 MHz; ENOSC = Low 0.47 nA/ t ON I OUT ON Prop. Delay Switched on EN2 and EN2B 0.45 ns t OFF I OUT OFF Prop. Delay Switched on EN2 and EN2B 0.40 ns t disr Disable Time, Read Channel Switch on ENR 1.1 ns t enr Enable Time, Read Channel Switch on ENR 1.1 ns t dis Disable Time, (Shutdown) 3 µs t en Enable Time, (Shutdown) 3 µs BW C Channel Bandwidth, –3 dB I OUT = 50 mA, All Channels 2.5 MHz f OSC Oscillator Frequency R F =3k Ω Range 200 MHz to 600 MHz 270 330 390 MHz T DO Disable Time Oscillator 5.2 ns T EO Enable Time Oscillator 5.4 ns Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation. Note 2: For testing purposes, ESD was applied using ‘Human body model’; 1.5 k Ω in series with 100 pF Note 3: Machine Model, 0 Ω in series with 200 pF. Note 4: Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150˚C Note 5: The maximum power dissipation is a function of TJ(MAX, θJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) -TA)/θJA. All numbers apply for packages soldered directly onto a PC board. Note 6: Typical values represent the most likely parametric norm. Note 7: All limits are guaranteed by testing or statistical analysis. Note 8: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ =TA. There is no guarantee of parametric performance as indicated in the electrical tables under conditions of internal self-heating where TJ > TA. See Applications section for information on temperature de-rating of this device. Note 9: VGPD = ground potential difference voltage between driver and receiver www.national.com 3 |
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