2004 Aug 10

2

Philips Semiconductors

Product specification

NPN medium power 25 V transistor

PSS8050

FEATURES

• High total power dissipation

• High current capability.

APPLICATIONS

• Medium power switching and muting

• Amplification

• Portable radio output amplifier (class-B, push-pull).

DESCRIPTION

NPN transistor in a SOT54 (TO-92) plastic package.

PNP complement: PSS8550.

MARKING

QUICK REFERENCE DATA

PINNING

TYPE NUMBER

MARKING CODE

PSS8050C

S8050C

PSS8050D

S8050D

SYMBOL

PARAMETER

MAX.

UNIT

collector-emitter voltage

25

V

collector current (DC)

1.5

A

PIN

DESCRIPTION

1

collector

2

base

3

emitter

handbook, halfpage

1

3

2

MSB033

Fig.1 Simplified outline (SOT54).

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.

3. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. Operated under pulsed

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

40

V

collector-emitter voltage

open base

−

25

V

emitter-base voltage

open collector

−

6V

collector current (DC)

−

1.5

A

peak collector current

−

2A

base current (DC)

−

300

mA

peak base current

−

1A

total power dissipation

−

850

mW

−

900

mW

−

1W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C