PSS8050 datasheet(3/10 Pages) PHILIPS

3 / 10 page

2004 Aug 10

Philips Semiconductors

Product speciﬁcation

NPN medium power 25 V transistor

PSS8050

THERMAL CHARACTERISTICS

Notes

1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.

2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.

3. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.

Operated under pulsed conditions: pulse width tp ≤ 1 s; duty cycle δ≤ 0.75%.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

in free air; note 1

147

K/W

in free air; note 2

139

K/W

in free air; note 3

125

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB =35V; IE =0

−−

100

VCB =35V; IE = 0; Tamb = 150 °C −−

µA

ICEO

collector-emitter cut-off current

VCE =25V; IB =0

−−

100

IEBO

emitter-base cut-off current

VEB =6V; IC =0

−−

100

hFE

DC current gain

IC = 5 mA; VCE =1V

−−

IC = 800 mA; VCE =1V

−−

DC current gain

IC = 100 mA; VCE =1V

PSS8050C

120

−

200

PSS8050D

160

−

300

VCEsat

collector-emitter saturation voltage

IC = 800 mA; IB =80mA

−

165

500

VBEsat

base-emitter saturation voltage

IC = 800 mA; IB =80mA

−−

1.2

VBEon

base-emitter turn-on voltage

IC = 10 mA; VCE =1V

−−

transition frequency

IC = 50 mA; VCE =10V;

f = 100 MHz

100

−−

MHz

collector capacitance

VCB =10V; IE =ie = 0; f = 1 MHz

−−

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