PSS8050 datasheet(4/10 Pages) PHILIPS

4 / 10 page

2004 Aug 10

Philips Semiconductors

Product speciﬁcation

NPN medium power 25 V transistor

PSS8050

handbook, halfpage

400

100

200

300

MLD946

10−1

IC (mA)

hFE

102

103

104

(1)

(2)

(3)

Fig.2

DC current gain as a function of collector

current; typical values.

PSS8050C VCE =1V.

(1) Tamb = 150 °C.

(2) Tamb =25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

200

1200

400

600

800

1000

MLD947

10−1

110

IC (mA)

VBE

(mV)

103

102

104

(1)

(2)

(3)

Fig.3

Base-emitter voltage as a function of

collector current; typical values.

PSS8050C VCE =1V.

(1) Tamb = −55 °C.

(2) Tamb =25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

10−1

110

102

103

104

102

103

MLD948

IC (mA)

VCEsat

(mV)

(1)

(3)

(2)

Fig.4

Collector-emitter saturation voltage as a

function of collector current; typical values.

PSS8050C IC/IB = 10.

(1) Tamb = 150 °C.

(2) Tamb =25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

MLD950

200

1400

600

1000

10−1

110

IC (mA)

VBEsat

(mV)

102

103

104

(1)

(3)

(2)

Fig.5

Base-emitter saturation voltage as a

function of collector current; typical values.

PSS8050C IC/IB = 10.

(1) Tamb = −55 °C.

(2) Tamb =25 °C.

(3) Tamb = 150 °C.

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