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MIC45404 Datasheet(PDF) 20 Page - Microchip Technology |
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MIC45404 Datasheet(HTML) 20 Page - Microchip Technology |
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20 / 32 page ![]() MIC45404 DS20005478A-page 20 2015 Microchip Technology Inc. The programmed VIN UVLO threshold, VIN_RISE, is given by: EQUATION 5-2: To desensitize the VIN UVLO threshold against varia- tions of the pull-up current, EN_I, it is recommended to run the R1 –R2 voltage divider at a significantly higher current level than the EN_I current. The corresponding VIN UVLO hysteresis, VIN_HYS, is calculated as follows: EQUATION 5-3: Similar calculations also apply to the internal LDO activation threshold. 5.2 Setting the Switching Frequency The MIC45404 switching frequency can be programmed using FREQ, as shown in Table 5-1. The switching frequency setting is not arbitrary, but it needs to be adjusted according to the particular output voltage selection due to peak-to-peak inductor ripple requirements. This is illustrated in Section 5.5 “Permissible MIC45404 Settings Combinations” . 5.3 Setting the Output Voltage The MIC45404 output voltage can be programmed by setting pins, VOSET0 and VOSET1, as shown in Table 5-2. To achieve accurate output voltage regulation, the OUTSNS pin (internal feedback divider top terminal) should be Kelvin-connected as close as possible to the point of regulation top terminal. Since both the internal reference and the internal feedback divider’s bottom terminal refer to AGND, it is important to minimize voltage drops between the AGND and the point of regulation return terminal. 5.4 Setting the Current Limit The MIC45404’s valley-mode current limit on the low-side MOSFET can be programmed by means of ILIM as shown in Table 5-3. Note that the programmed current limit values act as pulse-by-pulse, current limit thresholds on the valley inductor current. If the inductor current has not decayed below the threshold at the time the PWM requires a new on time, the high-side MOSFET turn-on is either delayed, until the valley current recovers below the threshold, or skipped. Each time the high-side MOSFET turn-on is skipped, a 4-bit up-down counter is incremented. When the counter reaches the configuration ‘1111’, a hiccup sequence is invoked in order to reduce power dissipation under prolonged short-circuit conditions. The highest current limit setting (6.8A) is intended to comfortably accommodate a 5A application. Ensure that the value of the operating junction temperature does not exceed the maximum rating in high output power applications. TABLE 5-1: SWITCHING FREQUENCY SETTINGS FREQ Pin Setting Frequency High Z (open) 400 kHz 0 (GND) 565 kHz 1 (VDDA) 790 kHz V IN_RISE EN_R 1 R 2 R 1 ------ + EN_I R 2 – = Where: EN_R = 1.21V EN_I = 2 µA R1 and R2 = External resistors V IN_HYS 150 mV 1 R 2 R 1 ------ + = TABLE 5-2: OUTPUT VOLTAGE SETTINGS VOSET1 VOSET0 Output Voltage 0 (GND) 0 (GND) 3.3V 0 (GND) 1 (VDDA) 2.5V (2.49V) 1 (VDDA) 0 (GND) 1.8V 1 (VDDA) 1 (VDDA)1.5V 0 (GND) High Z (open) 1.2V High Z (open) 0 (GND) 1.0V 1 (VDDA) High Z (open) 0.9V High Z (open) 1 (VDDA)0.8V High Z (open) High Z (open) 0.7V TABLE 5-3: CURRENT LIMIT SETTINGS ILIM Valley Current Limit (Typical Value) Rated Output Current 0 (GND) 4.6 A 3A 1 (VDDA) 6.2 A 4A High Z (open) 6.8 A 5A |
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