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MIC45404 Datasheet(PDF) 20 Page - Microchip Technology

Part # MIC45404
Description  19V 5A Ultra-Low Profile DC-to-DC Power Module
PDF  32 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MIC45404 Datasheet(HTML) 20 Page - Microchip Technology

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MIC45404
DS20005478A-page 20
 2015 Microchip Technology Inc.
The programmed VIN UVLO threshold, VIN_RISE, is
given by:
EQUATION 5-2:
To desensitize the VIN UVLO threshold against varia-
tions of the pull-up current, EN_I, it is recommended to
run the R1 –R2 voltage divider at a significantly higher
current level than the EN_I current.
The corresponding VIN UVLO hysteresis, VIN_HYS, is
calculated as follows:
EQUATION 5-3:
Similar calculations also apply to the internal LDO
activation threshold.
5.2
Setting the Switching Frequency
The
MIC45404
switching
frequency
can
be
programmed using FREQ, as shown in Table 5-1.
The switching frequency setting is not arbitrary, but it
needs to be adjusted according to the particular output
voltage selection due to peak-to-peak inductor
ripple requirements. This is illustrated in Section 5.5
“Permissible MIC45404 Settings Combinations”
.
5.3
Setting the Output Voltage
The MIC45404 output voltage can be programmed by
setting pins, VOSET0 and VOSET1, as shown in
Table 5-2.
To achieve accurate output voltage regulation, the
OUTSNS pin (internal feedback divider top terminal)
should be Kelvin-connected as close as possible to the
point of regulation top terminal. Since both the internal
reference and the internal feedback divider’s bottom
terminal refer to AGND, it is important to minimize
voltage drops between the AGND and the point of
regulation return terminal.
5.4
Setting the Current Limit
The MIC45404’s valley-mode current limit on the
low-side MOSFET can be programmed by means of
ILIM as shown in Table 5-3.
Note that the programmed current limit values act as
pulse-by-pulse, current limit thresholds on the valley
inductor current. If the inductor current has not decayed
below the threshold at the time the PWM requires a new
on time, the high-side MOSFET turn-on is either delayed,
until the valley current recovers below the threshold, or
skipped. Each time the high-side MOSFET turn-on is
skipped, a 4-bit up-down counter is incremented. When
the counter reaches the configuration ‘1111’, a hiccup
sequence is invoked in order to reduce power dissipation
under prolonged short-circuit conditions.
The highest current limit setting (6.8A) is intended to
comfortably accommodate a 5A application. Ensure
that the value of the operating junction temperature
does not exceed the maximum rating in high output
power applications.
TABLE 5-1:
SWITCHING FREQUENCY
SETTINGS
FREQ Pin Setting
Frequency
High Z (open)
400 kHz
0
(GND)
565 kHz
1
(VDDA)
790 kHz
V
IN_RISE
EN_R
1
R
2
R
1
------
+


EN_I
R
2
–
=
Where:
EN_R = 1.21V
EN_I = 2 µA
R1 and R2 = External resistors
V
IN_HYS
150 mV
1
R
2
R
1
------
+


=
TABLE 5-2:
OUTPUT VOLTAGE SETTINGS
VOSET1
VOSET0
Output Voltage
0
(GND)
0
(GND)
3.3V
0
(GND)
1
(VDDA)
2.5V (2.49V)
1
(VDDA)
0
(GND)
1.8V
1
(VDDA)
1
(VDDA)1.5V
0
(GND)
High Z (open)
1.2V
High Z (open)
0
(GND)
1.0V
1
(VDDA)
High Z (open)
0.9V
High Z (open)
1
(VDDA)0.8V
High Z (open)
High Z (open)
0.7V
TABLE 5-3:
CURRENT LIMIT SETTINGS
ILIM
Valley Current Limit
(Typical Value)
Rated Output
Current
0
(GND)
4.6 A
3A
1
(VDDA)
6.2 A
4A
High Z (open)
6.8 A
5A



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