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BSS314PE Datasheet(PDF) 1 Page - ZP Semiconductor |
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BSS314PE Datasheet(HTML) 1 Page - ZP Semiconductor |
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1 / 3 page ![]() BSS314PE OptiMOS™-P 3 Small-Signal-Transistor Features • P-channel • Enhancement mode • Logic level (4.5V rated) • ESD protected • Qualified according AEC Q101 • 100% Lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A=25 °C -1.5 A T A=70 °C -1.2 Pulsed drain current I D,pulse T A=25 °C -6.1 Avalanche energy, single pulse E AS I D=-1.5 A, R GS=25 W 6 mJ Reverse diode dv /dt dv /dt I D=-1.5 A, V DS=-16 V, di /dt =-200A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS ±20 V Power dissipation 1) P tot T A=25 °C W Operating and storage temperature T j, T stg -55 ... 150 °C ESD Class JESD22-A114 -HBM 1000V to 2000V Soldering Temperature 260 °C °C IEC climatic category; DIN IEC 68-1 55/150/56 °C Value 0.5 PG-SOT-23 3 1 2 V DS 30 V R DS(on),max V GS=-10 V 140 m W V GS=-4.5 V 230 I D -1.5 A Product Summary Type Package Tape and Reel Information Marking Lead Free Packing BSS314PE PG-SOT23 H6327: 3000 pcs/ reel YGs Yes Non dry 3 1 2 1 of 3 sales@zpsemi.com www.zpsemi.com |
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