BSS314PE datasheet(2/3 Pages) ZPSEMI

2 / 3 page

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance,

junction - ambient

R thJA

minimal footprint

250

K/W

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS= 0V, I D=-250µA

-30

Gate threshold voltage

V GS(th)

V DS=VGS, I D=-6.3µA

-1

-1.5

-2

Drain-source leakage current

I DSS

V DS=-30V, V GS=0 V,

T j=25 °C

-1

V DS=-30V, V GS=0V,

T j=150 °C

-100

Gate-source leakage current

I GSS

V GS=-20V, V DS=0V

-5

μA

Drain-source on-state resistance

R DS(on)

V GS=-4.5V,

I D=-1.2A

153

230

V GS=-10V, I D=-1.5A

107

140

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=-1.2 A

Values

1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both

sides of the PCB.

BSS314PE

2 of 3

sales@zpsemi.com

BSS314PE Datasheet(PDF) 2 Page - ZP Semiconductor

BSS314PE Datasheet(HTML) 2 Page - ZP Semiconductor

Html Pages

1 2 3

Datasheet Download

Link URL