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BSS314PE Datasheet(PDF) 3 Page - ZP Semiconductor |
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BSS314PE Datasheet(HTML) 3 Page - ZP Semiconductor |
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3 / 3 page ![]() Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 221 294 pF Output capacitance C oss - 126 168 Reverse transfer capacitance Crss - 7 11 Turn-on delay time t d(on) - 5.1 - ns Rise time t r - 3.9 - Turn-off delay time t d(off) - 12.4 - Fall time t f - 2.8 - Gate Charge Characteristics Gate to source charge Q gs - -0.7 - nC Gate to drain charge Q gd - -0.3 - Gate charge total Q g - -2.9 - Gate plateau voltage V plateau - -3.2 - V Reverse Diode Diode continous forward current I S - - -0.5 A Diode pulse current I S,pulse - - -6.1 Diode forward voltage V SD V GS=0 V, I F=-1.5A, T j=25 °C - 0.8 1.1 V Reverse recovery time t rr - 12.5 - ns Reverse recovery charge Q rr - 4.3 - nC V R=-15 V, I F=-1.5A, di F/dt =100 A/µs T A=25 °C Values V GS=0 V, V DS=-15 V, f =1 MHz V DD=-15V, V GS=-10 V, I D=-1.5 A, R G=6 W V DD=-15V, I D=-1.5A, V GS=0 to -10 V BSS314PE 3 of 3 sales@zpsemi.com www.zpsemi.com |
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