HV5812 datasheet(3/16 Pages) MICROCHIP

3 / 16 page

 2016 Microchip Technology Inc.

DS20005629A-page 3

HV5812

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings†

Supply Voltage, VDD................................................................................................................................ –0.5V to +7.5V

Supply Voltage, VPP..................................................................................................................................–0.5V to +90V

Logic Input Levels ............................................................................................................................ –0.3V to VDD +0.3V

Maximum Operating Junction Temperature .........................................................................................................+125°C

Storage Temperature ............................................................................................................................–55°C to +150°C

Power Dissipation:

28-lead PDIP ......................................................................................................................................... 2000 mW

28-lead PLCC........................................................................................................................................ 1900 mW

28-Lead SOW........................................................................................................................................ 1700 mW

† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only, and functional operation of the device at those or any other conditions above those

indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for

extended periods may affect device reliability.

RECOMMENDED OPERATING CONDITIONS

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

Supply Voltage

VDD

4.5

—

5.5

Supply Voltage

VPP

—

Operating Junction Temperature

–40

—

+125

°C

DC ELECTRICAL CHARACTERISTICS

Electrical Specifications: Over recommended operating conditions; TA = 25°C unless otherwise indicated.

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

Output Leakage Current

IDSS

—

–5

–15

µA

VOUT = 0V, TA = +70°C

High-level Output

VOH

HVOUT

78.5

—

IOUT = –25 mA, VPP = 80V,



TJ = +25°C

—

IOUT = –25 mA, VPP = 80V,



TJ = +125°C

DATA

OUT

4.5

4.7

—

IOUT = –200 µA, VDD = 5V

Low-level Output

VOL

HVOUT

—

1.5

IOUT = 1 mA, TJ = +25°C, VDD = 5V

—

2.3

IOUT = 1 mA, TJ = +125°C,

VDD = 5V

DATA

OUT

—

200

250

IOUT = +200 µA, VDD = 5V

Output Pull-down Current

ISINK

3.5

—

VOUT = 5V to VPP, VDD = 5V

High-level Logic Input Voltage

VIH

3.5

—

5.3

VDD = 5V

Low-level Logic Input Voltage

VIL

–0.3

—

0.8

High-level Logic Input Current

IIH

—

0.05

0.5

µA

VIN = VDD, VDD = 5V

Low-level Logic Input Current

IIL

—

–0.05

–0.5

µA

VIN = 0.8V, VDD = 5V

Quiescent VDD Supply

Current

IDDQ

—

100

300

µA

All outputs high, VDD = 5V

—

100

300

All outputs low, VDD = 5V

Quiescent VPP Supply Current

IPPQ

—

100

µA

All outputs high, no load

—

100

All outputs low, no load

HV5812 Datasheet(PDF) 3 Page - Microchip Technology

HV5812 Datasheet(HTML) 3 Page - Microchip Technology

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Datasheet Download

Link URL