ESDALC6V1W5 datasheet(3/9 Pages) STMICROELECTRONICS

Part #	ESDALC6V1W5

Description	QUAD TRANSIL??ARRAY FOR ESD PROTECTION

PDF	9 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 9 page

ESDALC6V1W5

3/9

0.0

0.1

0.2

0.3

0.4

0.5

0.6

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0.8

0.9

1.0

1.1

100

125

150

175

Tj(°C)

Ppp[Tj initial] / Ppp [Tj initial = 25°C]

Fig. 1: Relative variation of peak pulse power

versus initial junction temperature.

100

tp(µs)

Tj initial = 25°C

Ppp(W)

Fig. 2: Peak pulse power versus exponential pulse

duration.

VR(V)

F=1MHz

Vosc=30mV

RMS

Tj=25°C

C(pF)

Fig. 3: Junction capacitance versus reverse voltage

applied (typical values).

0.1

1.0

10.0

100.0

1020

3040

5060

Vcl(V)

tp=2.5µs

Tj initial =25°C

Ipp(A)

Fig. 4: Clamping voltage versus peak pulse cur-

rent (maximum values, rectangular waveform).

100

125

Tj(°C)

IR [Tj] / IR [Tj=25°C]

Fig. 5: Relative variation of leakage current versus

junction temperature (typical values).

to be

protected

I/02

I/01

I/04

I/03

Fig. 6: Application example

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