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CAT5409WI00 Datasheet(PDF) 6 Page - ON Semiconductor |
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CAT5409WI00 Datasheet(HTML) 6 Page - ON Semiconductor |
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6 / 15 page ![]() CAT5409 http://onsemi.com 6 Table 10. RELIABILITY CHARACTERISTICS Symbol Parameter Reference Test Method Min Max Units NEND (Note 10) Endurance MIL−STD−883, Test Method 1033 1,000,000 Cycles/Byte TDR (Note 10) Data Retention MIL−STD−883, Test Method 1008 100 Years VZAP (Note 10) ESD Susceptibility MIL−STD−883, Test Method 3015 2000 V ILTH (Notes 10, 11) Latch-up JEDEC Standard 17 100 mA 10.This parameter is tested initially and after a design or process change that affects the parameter. 11. tPUR and tPUW are delays required from the time VCC is stable until the specified operation can be initiated. Figure 2. Bus Timing SCL SDA IN SDA OUT Figure 3. Write Cycle Timing STOP CONDITION START CONDITION ADDRESS ACK 8TH BIT BYTE n SCL SDA Figure 4. Start/Stop Timing START CONDITION SDA STOP CONDITION SCL tSU:STO tBUF tDH tSU:DAT tR tLOW tLOW tHD:DAT tHIGH tF tHD:STA tSU:STA tAA tWR |
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