BFP720F

Product Brief

Data Sheet

7

Revision 1.1, 2012-10-25

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Product Brief

The BFP720F is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable

high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports

in which low power consumption is a key requirement. The typical transition frequency is approximately 45 GHz,

hence the device offers high power gain at frequencies up to 12 GHz in amplifier applications. The device is

housed in a thin small flat plastic package with visible leads.