Cypress Semiconductor Corporation

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198 Champion Court

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San Jose

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408-943-2600

Document Number: 002-13915 Rev. *A

Revised October 21, 2016

S70GL02GT

2-Gbit (256-Mbyte)

3.0V Flash Memory

General Description

The Cypress S70GL02GT 2-Gigabit MirrorBit

This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer

that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time

than standard single byte/word programming algorithms. This makes the device an ideal product for today’s embedded applications

that require higher density, better performance and lower power consumption.

This document contains information for the S70GL02GT device, which is a dual-die stack of two S29GL01GT die. For detailed

specifications, please refer to the discrete die data sheet:

Distinctive Characteristics

 CMOS 3.0 Volt Core with Versatile I/O™

 Two 1024 Megabit (S29GL01GT) in a single 64-ball Fortified-

BGA package (see S29GL01GT datasheet for full

specifications)

 45 nm MirrorBit Eclipse process technology

 Single supply (V

 Versatile I/O Feature

 x8 and x16 data bus

 16-word/32-byte page read buffer

 512-byte Programming Buffer

– Programming in Page multiples, up to a maximum of

512 bytes

 Sector Erase

– Uniform 128-kbytes sectors

– S70GL02GT: two thousand forty-eight sectors

 Suspend and Resume commands for Program and Erase

operations

 Status Register, Data Polling, and Ready/Busy pin methods

to determine device status

 Advanced Sector Protection (ASP)

– Volatile and non-volatile protection methods for each

sector

 Separate 1024-bye One Time Program (OTP) array with two

lockable regions

– Available in each device Support for CFI (Common Flash

Interface)

 WP# input

– Protects the last sector of the device, regardless of sector

protection settings

 Temperature Range / Grade

– Industrial (–40°C to +85°C)

– Industrial Plus (–40°C to +105°C)

– Automotive, AEC-Q100 Grade 3 (-40°C to +85°C)

– Automotive, AEC-Q100 Grade 2 (-40°C to +105°C)

 100,000 Program-Erase cycles

 20-year data retention

 Packaging Options

– 64-ball LSH Fortified BGA, 13 mm x 11 mm

Performance Characteristics

Notes

2. Contact a sales representative for availability.

Document

Cypress Document Number

S29GL01GT, S29GL512T Data Sheet

002-00247

Max. Read Access Times (ns) (Note 1)

Parameter

2 Gb

110

120

30

110

120

35