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LM2637 Datasheet(PDF) 13 Page - National Semiconductor (TI) |
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LM2637 Datasheet(HTML) 13 Page - National Semiconductor (TI) |
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13 / 17 page ![]() Applications Information (Continued) FET Selection Switching Section — The selection of FET switches affects both the efficiency of the whole converter and the current limit setting (if V DS sensing mode is selected). From effi- ciency standpoint it is suggested that for the high-side switch, only logic level FETs be used. Standard FETs can be used for the low-side switch when 12V is used to power the V DD pin. The power loss associated with the FETs is two-fold — Ohmic loss and switching loss. The Ohmic loss is relatively easy to calculate whereas the switching loss is much more difficult to estimate. The switching loss in a syn- chronous buck converter usually happens only in the high-side FET. When the high-side FET starts to turn on, in- ductor current is flowing in the low-side body diode. Since the body diode undergoes a reverse recovery before forced off, the high-side FET will experience a pulse of drain current turn on. The simultaneous presence of high drain-source voltage and high drain current in the high-side FET causes the switching loss. Apparently the switching loss is propor- tional to the PWM frequency. Having a Schottky diode in par- allel with the low-side body diode will to a large extent allevi- ate the problem. This is because a Schottky diode does not undergo a reverse recovery and it has a lower forward volt- age than the body diode so it will take the majority of the in- ductor current after the low-side FET is turned off. The low-side FET benefits from what is called zero voltage switching (ZVS). That is because every time just before the low-side FET is turned on, inductor current is already flowing in its body diode, resulting in a low drain-source voltage. When the low-side FET is turned off, current will be shifted to its body diode temporarily, again clamping the drain-source voltage to a low value. It is difficult to calculate the switching loss due to its compli- cated nature. Fortunately at a reasonable PWM frequency such as 300 kHz, the switching loss is usually much less than the Ohmic loss. So the designer may initially ignore the switching loss when trying to meet an efficiency specifica- tion. The Ohmic loss for the high-side FET is: (12) The Ohmic loss for the low-side FET is: (13) Notice when determining the r DS_ON, the gate-source volt- ages are usually different for the two FET’s. For the high-side FET, V GS is VDD minus drain voltage. For the low-side, V GS is VDD. This means the low-side FET may present a lower r DS_ON when the same type of FET is used for both switches. Since the r DS_ON has a positive temperature coefficient, the actual Ohmic loss may be somewhat higher than calculated. The power supply designer may target 125˚C FET operating temperature under maximum load and highest ambient tem- perature and then use the corresponding r DS_ON found in the FET datasheet. Linear Section — Two things need to be considered, i.e., r DS_ON and thermal capacity. Make sure that the maximum possible r DS_ON on the N-FET is lower than the lowest input-output differential voltage divided by maximum load current. In a typical motherboard 3.3V to 1.5V or 3.3V to 2.5V application, this is not an issue because the maximum allowable r DS_ON is way higher than a typical N-FET. It is the thermal capacity and cost that limits the selection. As an ex- ample, consider a 3.3V to 1.5V, 4A application. The lowest input-output differential voltage is 3.3V x 95% –1.5V x 102% = 1.605V, so the maximum allowable r DS_ON is 1.605V ÷ 4A = 401 m Ω. Almost all low voltage discrete N-FET’s can meet this requirement. However, the maximum power dissipation on the FET is (3.3V x 105% –1.5V x 98%)x4A = 8W. At least a TO-220 package with a beefy heat sink is necessary to handle the thermal dissipation. When there is a load tran- sient requirement such as that of the GTL+ supply, make sure the r DS_ON is much lower than the value calculated from steady state operation because headroom is important for transient performance. Capacitor Selection Switching Section — Output Capacitors. The selection of capacitors is an ex- tremely important step when designing a converter for a load such as the MPU core. Since the typical slew rate of the load current during a large load transient is around 20 A/µs to 30 A/µs, the switching converter has to rely on the output ca- pacitors to take care of the first few microseconds. Under such a current slew rate, ESR of the output capacitors is more of a concern than the ESL in terms of voltage excur- sion. Depending on the kind of capacitors being used, total output capacitance value may or may not be an important factor. When the output capacitance is too low, the converter may have to have a small output inductor to quickly supply current to the output capacitors when the load suddenly kicks in and to quickly stop supplying current when the load is suddenly removed. Multilayer ceramic (MLC) capacitors can have very low ESR but also a low capacitance value compared to other kinds of capacitors. Low ESR aluminum electrolytic capacitors tend to have large sizes and capaci- tance. Tantalum electrolytic capacitors can have a fairly low ESR with a much smaller size and capacitance than the alu- minum capacitors. Certain OSCON capacitors present ultra low ESR and long life span. By the time the total ESR of the output capacitor bank reaches around 9 m Ω, the capaci- tance of the aluminum/tantalum/OSCON capacitors is usu- ally already in the millifarad range. For those capacitors, ESR is the only factor to consider. MLCs can have the same amount of total ESR with much less capacitance, most prob- ably under 100 µF. A very small inductor, ultra fast control loop and a high switching frequency become necessary in such a case to deal with the fast charging/discharging rate of the output capacitor bank. From a cost savings standpoint, aluminum electrolytic ca- pacitors are the most popular choice for output capacitors. They have reasonably long life span and they tend to have hugh capacitance to withstand the charging or discharging process during a load transient for a fairly long period. Sanyo MV-GX and MV-DX series’ give good performance when enough of the capacitors are paralleled. The 6MV1500GX capacitor has a typical ESR of 44 m Ω and a capacitance of 1500 µF at a voltage rating of 6.3V. For a detailed procedure for determining number of output capacitors, refer to the ap- plication note Using Dynamic Voltage Positioning Technique to Reduce the Cost of Output Capacitors in Advanced Micro- processor Power Supplies and the associated spreadsheet for automated design. Input Capacitors. The challenge on input capacitors is the RMS ripple current. The large ripple current drawn by the high-side switch tends to generate quite some heat due to the capacitor ESR. The RMS ripple current ratings in the ca- pacitor catalogs are usually specified under 105˚C. In the www.national.com 13 |
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