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SMP1307 Datasheet(PDF) 1 Page - Alpha Industries |
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SMP1307 Datasheet(HTML) 1 Page - Alpha Industries |
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1 / 4 page ![]() Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 1 Specifications subject to change without notice. 1/01A Very Low Distortion Attenuator Plastic Packaged PIN Diodes Features s Low Distortion Design s Frequency Range from HF to > 2 GHz s Designed for CATV AGC Applications s Designed for High Volume Wireless Applications Description The SMP1307 series of plastic packaged, surface mountable, low capacitance (0.3 pF) silicon PIN diodes are designed for use in attenuator applications from 5 MHz to beyond 2 GHz. The thick 175 µm I region of these PIN diodes makes them very attractive for use in very low distortion PI and TEE attenuators commonly used in TV distribution applications. The 1.5 µS typical carrier lifetime of these diodes results in resistance of 100 Ω maximum at 1 mA and 10 Ω maximum at 10 mA. Available in a selection of plastic packages, as a single diode in the small footprint SOD-323, and in a variety of configurations in the SOT-23. Also available in a SOT-5 (SMP1307-027) package as a four diode array designed for insertion in the commonly used 4 diode PI attenuator circuit. SMP1307 Series Characteristic Value Reverse Voltage (VR) 200 V Power Dissipation @ 25°C Lead 250 mW Temperature (PD) Storage Temperature (TST) -65°C to +150°C Operating Temperature (TOP) -65°C to +150°C ESD Human Body Model Class 1C Absolute Maximum Ratings Single Common Series Pair Single PI Cathode Marking: PJ1 Marking: PJ3 Marking: PJ2 Marking: PJM SOT-23 SOT-23 SOT-23 SOD-323 SOT-5 o SMP1307-001 o SMP1307-004 o SMP1307-005 o SMP1307-011 o SMP1307-027 LS = 1.5 nH LS = 1.5 nH LS = 1.5 nH LS = 1.5 nH o Available through distribution. Parameter Condition Typ. Max. Unit Reverse Current (IR)VR = 200 V 10 µA Capacitance (CT) F = 1 MHz, V = 30 V 0.30 pF Resistance (RS) F = 100 MHz, I = 1 mA 75 100 Ω Resistance (RS) F = 100 MHz, I = 10 mA 15 Ω Resistance (RS) F = 100 MHz, I = 100 mA 3.0 Ω Forward Voltage (VF) IF = 10 mA 0.85 V Carrier Lifetime (TI) IF = 10 mA 1.5 µS I Region Width 175 µm Electrical Specifications at 25°C |
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