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STM8AL3LE8x Datasheet(PDF) 77 Page - STMicroelectronics |
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STM8AL3LE8x Datasheet(HTML) 77 Page - STMicroelectronics |
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77 / 133 page  DocID027180 Rev 5 77/133 STM8AL31E8x STM8AL3LE8x Electrical parameters 119 Figure 17. Typical IDD(LPR) vs. VDD (LSI clock source), all peripherals OFF Table 23. Total current consumption and timing in low-power run mode at VDD = 1.65 V to 3.6 V Symbol Parameter Conditions(1) Typ. Max. Unit IDD(LPR) Supply current in low-power run mode LSI RC osc. (at 38 kHz) all peripherals OFF TA = -40 °C to 25 °C 5.10 6.50(2) μA TA = 85 °C 6.80 11.00(3) TA = 125 °C 13.40 20.00(3) LSE (4) external clock (32.768 kHz) TA = -40 °C to 25 °C 5.25 5.60(2) TA = 85 °C 5.85 6.30(2) TA = 125 °C 14.00 16.50(2) 1. No floating I/Os 2. Guaranteed by characterization results. 3. Tested at 85°C for temperature range A or 125°C for temperature range C. 4. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the LSE consumption (IDD LSE) must be added. Refer to Table 33 |
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