IRGP4263DPBF datasheet(2/12 Pages) IRF

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IRGP4263DPbF/IRGP4263D-EPbF

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August 21, 2014

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)CES

Collector-to-Emitter Breakdown Voltage

650

—

VGE = 0V, IC = 100µA 

V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage

—

0.69

—

V/°C VGE = 0V, IC = 3mA (25°C-175°C)

VCE(on)

Collector-to-Emitter Saturation Voltage

—

1.7

2.1

IC = 48A, VGE = 15V, TJ = 25°C

—

2.1

—

IC = 48A, VGE = 15V, TJ = 175°C

VGE(th)

Gate Threshold Voltage

5.5

—

7.7

VCE = VGE, IC = 1.4mA

VGE(th)/TJ

Threshold Voltage Temperature Coeff.

—

-23

—

mV/°C VCE = VGE, IC = 1.4mA (25°C-150°C)

gfe

Forward Transconductance

—

VCE = 50V, IC = 48A, PW = 20µs

ICES

Collector-to-Emitter Leakage Current

—

1.0

µA

VGE = 0V, VCE = 650V

—

890

—

VGE = 0V, VCE = 650V, TJ = 175°C

IGES

Gate-to-Emitter Leakage Current

—

±100

VGE = ±20V

—

1.9

2.85

IF = 48A

—

1.4

—

IF = 48A, TJ = 175°C

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max Units

Conditions

Total Gate Charge (turn-on)

—

145

IC = 48A

Qge

Gate-to-Emitter Charge (turn-on)

—

VGE = 15V

Qgc

Gate-to-Collector Charge (turn-on)

—

VCC = 400V

Eon

Turn-On Switching Loss

—

1.7

2.6

mJ IC = 48A, VCC = 400V, VGE=15V

RG = 10, L = 210µH, TJ = 25°C

Energy losses include tail & diode

reverse recovery 

Eoff

Turn-Off Switching Loss

—

1.0

1.9

Etotal

Total Switching Loss

—

2.7

4.5

td(on)

Turn-On delay time

—

Rise time

—

td(off)

Turn-Off delay time

—

140

160

Fall time

—

Eon

Turn-On Switching Loss

—

2.9

—

mJ I

C = 48A, VCC = 400V, VGE=15V

RG = 10, L = 210µH, TJ = 175°C

Energy losses include tail & diode

reverse recovery 

Eoff

Turn-Off Switching Loss

—

1.4

—

Etotal

Total Switching Loss

—

4.3

—

td(on)

Turn-On delay time

—

Rise time

—

td(off)

Turn-Off delay time

—

145

—

Fall time

—

Cies

Input Capacitance

—

2935

—

VGE = 0V

Coes

Output Capacitance

—

235

—

VCC = 30V

Cres

Reverse Transfer Capacitance

—

f = 1.0MHz

RBSOA

Reverse Bias Safe Operating Area

TJ = 175°C, IC = 144A

FULL SQUARE

VCC = 480V, Vp ≤ 650V

VGE = +20V to 0V

SCSOA

Short Circuit Safe Operating Area

5.5

—

µs

TJ = 150°C,VCC = 400V, Vp ≤ 650V

VGE = +15V to 0V

Erec

Reverse Recovery Energy of the Diode

—

370

—

µJ

TJ = 175°C

trr

Diode Reverse Recovery Time

—

170

—

VCC = 400V, IF = 48A

Irr

Peak Reverse Recovery Current

—

VGE = 15V, Rg = 10

Diode Forward Voltage Drop

Notes:



VCC = 80% (VCES), VGE = 20V.



R is measured at TJ of approximately 90°C.



Refer to AN-1086 for guidelines for measuring V(BR)CES safely.



Maximum limits are based on statistical sample size characterization.



Pulse width limited by max. junction temperature.



Values influenced by parasitic L and C in measurement

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