5

5 - 8

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20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

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HMC136

GaAs MMIC BI-PHASE

MODULATOR, 4 - 8 GHz

v03.0909

General Description

Features

Functional Diagram

Chip Integrates Directly into MIC Designs

Carrier Suppression: 30 dB

Direct Modulation in the 4 - 8 GHz Band

Functions also as a Phase Detector

Die Size: 1.40 x 1.40 x 0.1 mm

Typical Applications

The HMC136 is suitable for:

• Wireless Local Loop

• LMDS & VSAT

• Point-to-Point Radios

• Test Equipment

The HMC136 Bi-Phase Modulator is designed to

phase-modulate an RF signal into reference and 180

degree states. Device input is at the RF port and out-

put is at the LO port. The polarity of the bias current at

the control port (IF port) defines the phase states.

Excellent amplitude and phase balance provided

by closely matched monolithic balun and diode

circuits delivers 30 dB of carrier suppression in a tiny

monolithic chip.

The device also functions as a demodulator or phase

comparator. As a demodulator, data emerges at the

control port when a modulated signal at the RF port

is compared to a reference signal at the LO port.

As a phase comparator, the phase angle between

two signals applied to the RF and LO ports is

represented by an analog voltage at the control port.

Except for carrier suppression, the data presented

here was measured under static conditions in which

a DC bias current (nominally 5 mA) is applied to the

control port.

Parameter

Min.

Typ.

Max.

Units

Frequency Band

4 - 8

GHz

Insertion Loss

810

dB

Return Loss, RF and LO Ports

2.5

3.0

dB

Amplitude Balance

0.1

0.5

dB

Phase Balance

4.0

6.0

deg

Carrier Supression (When driven with a 1 MHz square wave, 1.4 Vp-p)

25

30

dBc

Input Power for 1 dB Compression

4

8

dBm

Third Order Intercept, Input

10

15

dBm

Second Order Intercept, Input

25

35

dBm

Bias Current (Bias current forward biases internal Schottky diodes providing approximately 0.6 V

at the control port).

25

10

mA