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HMC448 Datasheet(PDF) 4 Page - Micross Components

Part # HMC448
Description  Test Instrumentation
PDF  9 Pages
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Manufacturer  MICROSS [Micross Components]
Direct Link  http://www.micross.com
Logo MICROSS - Micross Components

HMC448 Datasheet(HTML) 4 Page - Micross Components

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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC448
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 19 - 25 GHz OUTPUT
v01.1007
General Description
Features
Functional Diagram
Electrical Specifications, T
A = +25° C, Vd1 = Vd2 = 5V, 0 dBm Drive Level
Typical Applications
The HMC448 is suitable for:
• Clock Generation Applications:
SONET OC-192 & SDH STM-64
• Point-to-Point & VSAT Radios
• Test Instrumentation
• Military & Space
The HMC448 die is a x2 active broadband frequ-
ency multiplier chip utilizing GaAs PHEMT technology.
When driven by a 0 dBm signal, the multiplier pro-
vides +11 dBm typical output power from 19 to 25 GHz.
The Fo and 3Fo isolations are >22 dBc up to 22 GHz.
This multi-rate frequency multiplier can be used in
the generation of a half rate clock for 40 Gbps sys-
tems or as part of a multiplier chain to generate a
full rate 40 Gbps clock. The HMC448 is also ideal
for use in LO multiplier chains for Pt to Pt & VSAT
Radios yielding reduced parts count vs. traditional
approaches. The low additive SSB Phase Noise of
-135 dBc/Hz at 100 kHz offset helps maintain good
system noise performance. All data is with the chip
in a 50 ohm test fixture connected via 0.076 x 0.0127
mm (3mil x 0.5mil) ribbon bonds of minimal length
0.31mm (<12mils).
Output Power: +11 dBm
Wide Input Power Range: -4 to +6 dBm
Fo, 3Fo Isolation: >20 dBc @ Fout= 20 GHz
100 KHz SSB Phase Noise: -135 dBc/Hz
Single Supply: 5V@ 48 mA
Die Size: 1.16 x 1.20 x 0.1 mm
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range, Input
9.5 - 11.0
11.0 - 12.5
GHz
Frequency Range, Output
19 - 22
22 - 25
GHz
Output Power
5
9
8
12
dBm
Fo Isolation (with respect to output level)
25
15
dBc
3Fo Isolation (with respect to output level)
25
22
dBc
Input Return Loss
9
6
dB
Output Return Loss
5
5
dB
SSB Phase Noise (100 kHz Offset)
-135
-135
dBc/Hz
Supply Current (Idd)
48
67
48
67
mA



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