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SST38VF6402 Datasheet(PDF) 14 Page - Microchip Technology |
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SST38VF6402 Datasheet(HTML) 14 Page - Microchip Technology |
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14 / 64 page ![]() ©2015 DS-20005015B 08/15 14 64 Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404 Not Recommended for New Designs RY/BY# The RY/BY# pin can be used to determine the status of a Program or Erase operation. The RY/BY# pin is valid after the rising edge of the final WE# pulse in the command sequence. If RY/BY# = 0, then the device is actively programming or erasing. If RY/BY# = 1, the device is in Read mode. The RY/BY# pin is an open drain output pin. This means several RY/BY# can be tied together with a pull-up resistor to VDD.. Data Protection The SST38VF6401/6402/6403/6404 provide both hardware and software features to protect nonvolatile data from inadvertent writes. Hardware Data Protection Noise/Glitch Protection: A WE# or CE# pulse of less than 5 ns will not initiate a write cycle. VDD Power Up/Down Detection: The Write operation is inhibited when VDD is less than 1.5V. Write Inhibit Mode: Forcing OE# low, CE# high, or WE# high will inhibit the Write operation. This pre- vents inadvertent writes during power-up or power-down. Table 4: Write Operation Status Status DQ71 1. DQ7 and DQ2 require a valid address when reading status information. DQ6 DQ21 DQ1 RY/BY#2 2. RY/BY# is an open drain pin. RY/BY# is high in Read mode, and Read in Erase-Suspend mode. Normal Operation Standard Program DQ7# Toggle No Toggle 0 0 Standard Erase 0 Toggle Toggle N/A 0 Erase-Suspend Mode Read from Erase-Suspended Sector/Block 1 No toggle Toggle N/A 1 Read from Non- Erase- Suspended Sector/Block Data Data Data Data 1 Program DQ7# Toggle N/A N/A 0 Program Buffer-to-Flash Busy DQ7#3 3. During a Program Buffer-to-Flash operation, the datum on the DQ7 pin is the complement of DQ7 of the last word loaded in the Write-Buffer using the Write-to-Buffer command. Toggle N/A 0 0 Abort DQ7#3 Toggle N/A 1 0 T4.0 20005015 |
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