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LM383 Datasheet(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # LM383
Description  7W Audio Power Amplifier
PDF  6 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM383 Datasheet(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note *NO
TARGET FOR FNXref NS0064*),
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Peak Supply Voltage (50 ms)
LM383A (Note 2)
40V
LM383
25V
Operating Supply Voltage
20V
Output Current
Repetitive
3.5A
Non-repetitive
4.5A
Input Voltage
±0.5V
Power Dissipation (Note 3)
15W
Operating Temperature
0˚C to +70˚C
Storage Temperature
−60˚C to +150˚C
Lead Temperature
(Soldering, 10 sec.)
260˚C
Electrical Characteristics
V
S = 14.4V, TTAB = 25˚C, AV = 100 (40 dB), RL = 4Ω, unless otherwise specified
Parameter
Conditions
Min
Typ
Max
Units
DC Output Level
6.4
7.2
8
V
Quiescent Supply Current
Excludes Current in Feedback Resistors
45
80
mA
Supply Voltage Range
5
20
V
Input Resistance
150
k
Bandwidth
Gain = 40 dB
30
kHz
Output Power
V
S = 13.2V, f = 1 kHz
R
L = 4Ω, THD = 10%
4.7
W
R
L = 2Ω, THD = 10%
7.2
W
V
S = 13.8V, f = 1 kHz
R
L = 4Ω, THD = 10%
5.1
W
R
L = 2Ω, THD = 10%
7.8
W
V
S = 14.4V, f = 1 kHz
R
L = 4Ω, THD = 10%
4.8
5.5
W
R
L = 2Ω, THD = 10%
7
8.6
W
R
L = 1.6Ω, THD = 10%
9.3
W
V
S = 16V, f = 1 kHz
R
L = 4Ω, THD = 10%
7W
R
L = 2Ω, THD = 10%
10.5
W
R
L = 1.6Ω, THD = 10%
11
W
THD
P
o = 2W, RL = 4Ω,f = 1 kHz
0.2
%
P
o = 4W, RL = 2Ω,f = 1 kHz
0.2
%
Ripple Rejection
R
S = 50Ω,f = 100 Hz
30
40
dB
R
S = 50Ω,f = 1 kHz
44
dB
Input Noise Voltage
R
S = 0, 15 kHz Bandwidth
2
µV
Input Noise Current
R
S = 100 kΩ, 15 kHz Bandwidth
40
pA
Note 1: A 0.2 µF capacitor in series with a 1
Ω resistor should be placed as close as possible to pins 3 and 4 for stability.
Note 2: The LM383 shuts down above 25V.
Note 3: For operating at elevated temperatures, the device must be derated based on a 150˚C maximum junction temperature and a thermal resistance of 4˚C/W
junction to case.
PrintDate=1997/04/01 PrintTime=11:52:18 7152 ds007145 Rev. No. 1
Proof
2
http:\\www.national.com
2



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