NPN SILICON GENERAL

PURPOSE TRANSISTOR

NE734

SERIES

FEATURES

• LOW NOISE FIGURE: < 3 dB at 500 MHz

• HIGH GAIN: 15 dB at 500 MHz

• HIGH GAIN BANDWIDTH PRODUCT: 2 GHz

(3 GHz for the NE73435)

• SMALL COLLECTOR CAPACITANCE: 1 pF

•

HIGH RELIABILITY METALLIZATION

DESCRIPTION

The NE734 series of NPN silicon general purpose UHF tran-

sistors provide the designer with a wide selection of reliable

transistors for high speed logic and wide-band low noise

amplifier applications. The series uses NEC's highly reliable

platinum-silicide, titanium, platinum, and gold metallization

system to assure uniform performance and reliability. The

35 (MICRO-X)

30 (SOT 323 STYLE)

California Eastern Laboratories

PART NUMBER

NE73430

NE73435

2SC4185

2SC2148

PACKAGE OUTLINE

30

35

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

MIN

TYP

MAX

Gain Bandwidth Product at

GHz

1.5

3.0

GHz

2.3

dB

2.1

3.5

dB

4.0

MAG

f = 0.5 GHz

dB

17

18

f = 1 GHz

dB

13

f = 0.5 GHz

dB

16

f = 1 GHz

dB

8

8

9

Forward Current Gain Ratio at

25

100

200

40

100

180

µA

0.1

0.1

µA

0.1

pF

1.5

0.75

.55

1.5

Total Power Dissipation

mW

150

250

Thermal Resistance (Junction to Case)

°C/W

833

550

MAG =

K - 1

).

2

When K

≤ 1, MAG is undefined and MSG values are used. MSG = |S

21

|

, K = 1 + | ∆ | - |S

11

2

2

2

,

Notes:

1. Electronic Industrial Association of Japan.

2. Input and output are tuned for optimum noise figures.

3. Maximum Available Gain (MAG) is calculated

guard terminal.

NE73433 is in the plastic Mini-Mold package designed for

high-speed automated assembly operations for large volume

hybrid ICs. For hybrid MIC applications requiring more perfor-

mance, the NE73435 is recommended. This device is pack-

aged in the economical metal-ceramic, hermetic Micro-X pack-

age.