DATA SHEET

SEMICONDUCTOR

http://www.yeashin.com

1

REV.02 20120403

MUN211 Series

PIN 1

BASE

(INPUT)

PIN 3

COLLECTOR

(OUTPUT)

PIN 2

EMITTER

(GROUND)

R

1

R

2

Bias Resistor Transistors

PNP Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base-emitter

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the SOT-23

package which is designed for low power surface mount applications.

modified gull-winged leads absorb thermal stress during soldering

eliminating the possibility of damage to the die.

Rating

Symbol

Value

Unit

Collector-Base Voltage

50

Vdc

Collector-Emitter Voltage

50

Vdc

Collector Current

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

Derate above 25

°C

246 (Note 1.)

400 (Note 2.)

1.5 (Note 1.)

2.0 (Note 2.)

mW

°C/W

Thermal Resistance –

Junction-to-Ambient

508 (Note 1.)

311 (Note 2.)

°C/W

Thermal Resistance –

Junction-to-Lead

174 (Note 1.)

208 (Note 2.)

°C/W

Junction and Storage

Temperature Range

–55 to +150

°C

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

SOT–23 (TO–236AB)

1

2

3

H