MJD148 datasheet(2/6 Pages) ONSEMI

2 / 6 page

MJD148

www.onsemi.com

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

6.25

°C/W

Thermal Resistance, Junction−to−Ambient (Note 2)

RqJA

71.4

°C/W

2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.

ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 3)

(IC = 100 mAdc, IB = 0)

VCEO(sus)

−

Vdc

Collector Cutoff Current

(VCB = 45 Vdc, IE = 0)

ICBO

−

mAdc

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

IEBO

−

mAdc

ON CHARACTERISTICS (Note 3)

DC Current Gain

(IC = 10 mAdc, VCE = 5 Vdc)

(IC = 0.5 Adc, VCE = 1 Vdc)

(IC = 2 Adc, VCE = 1 Vdc)

(IC = 3 Adc, VCE = 1 Vdc)

hFE

−

375

−

Collector−Emitter Saturation Voltage

(IC = 2 Adc, IB = 0.2 Adc)

VCE(sat)

−

0.5

Vdc

Base−Emitter On Voltage

(IC = 2 Adc, VCE = 1 Vdc)

VBE(on)

−

1.1

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain−Bandwidth Product

(IC = 250 mAdc, VCE = 1 Vdc, f = 1 MHz)

−

MHz

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

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