27C256 datasheet(4/12 Pages) NSC

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Capacitance TA ea25 C f e 1 MHz (Note 2)

Symbol

Parameter

Conditions

Typ

Max

Units

CIN

Input Capacitance

VIN e 0V

COUT

Output Capacitance

VOUT e 0V

AC Test Conditions

Output Load

1 TTL Gate and

CL e 100 pF (Note 8)

Input Rise and Fall Times

5ns

Input Pulse Levels

045 to 24V

Timing Measurement Reference Level

(Note 10)

Inputs

08V and 20V

Outputs

08V and 20V

AC Waveforms (Notes 6 7 and 9)

TLD10833 – 4

Note 1

Stresses above those listed under ‘‘Absolute Maximum Ratings’’ may cause permanent damage to the device This is stress rating only and functional

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied Exposure to absolute

maximum rating conditions for extended periods may affect device reliability

Note 2

This parameter is only sampled and is not 100% tested

Note 3

OE may be delayed up to tACC b tOE after the falling edge of CE without impacting tACC

Note 4

The tDF and tCF compare level is determined as follows

High to TRI-STATE

the measured VOH1 (DC) b 010V

Low to TRI-STATE the measured VOL1 (DC) a 010V

Note 5

TRI-STATE may be attained using OE or CE

Note 6

The power switching characteristics of EPROMs require careful device decoupling It is recommended that at least a 01 mF ceramic capacitor be used on

every device between VCC and GND

Note 7

The outputs must be restricted to VCC a 10V to avoid latch-up and device damage

Note 8

TTL Gate IOL e 16 mA IOH eb400 mA

CL e 100 pF includes fixture capacitance

Note 9

VPP may be connected to VCC except during programming

Note 10

Inputs and outputs can undershoot to b20V for 20 ns Max

Note 11

CMOS inputs VIL e GND g03V VIH e VCC g03V

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