PCF85116 datasheet(10/20 Pages) PHILIPS

10 / 20 page

1997 Apr 02

Philips Semiconductors

Product speciﬁcation

2048

× 8-bit CMOS EEPROM with I2C-bus

interface

PCF85116-3

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. ESD Human Body model Q22 at Tamb =22 °C; discharge procedure according to MIL-STD-883C Method 3015.

10 CHARACTERISTICS

VDD = 2.7 to 5.5 V; VSS =0V; Tamb = −40 to +85 °C; unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDD

supply voltage

−0.3

+6.5

input voltage on any pin

Zi > 500 Ω

VSS − 0.8

+6.5

input current on any pin

−

1mA

output current

−

Tstg

storage temperature

−65

+150

°C

Tamb

operating ambient temperature

−40

+85

°C

Vesd

electrostatic discharge voltage

note 1

−

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Supplies

VDD

supply voltage

2.7

5.5

IDDR

supply current read

fSCL = 400 kHz;

VDD = 5.5 V

−

1.0

IDDW

supply current E/W

fSCL = 400 kHz;

VDD = 5.5 V

−

1.0

IDD(stb)

standby supply current

VDD = 2.7 V

−

µA

VDD = 5.5 V

−

µA

SDA input/output (pin 5)

VIL

LOW level input voltage

−0.8

+0.3VDD

VIH

HIGH level input voltage

0.7VDD

6.5

VOL1

LOW level output voltage

IOL = 3 mA; VDD(min)

−

0.4

VOL2

IOL = 6 mA; VDD(min)

−

0.6

ILO

output leakage current

VOH =VDD

−

µA

to(f)

output fall time from VIHmin to VILmax

note 1

with up to 3 mA sink current at VOL1

20 + 0.1Cb 250

with up to 6 mA sink current at VOL2

20 + 0.1Cb 250

tSP

pulse width of spikes suppressed by ﬁlter

100

input capacitance

VI =VSS

−

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