PSMN020 datasheet(1/7 Pages) PHILIPS

Part #	PSMN020

Description	N-channel TrenchMOS횚 transistor

PDF	7 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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1 / 7 page

Philips Semiconductors

Product specification

N-channel TrenchMOS

™ transistor

PSMN020-150W

FEATURES

SYMBOL

QUICK REFERENCE DATA

• ’Trench’ technology

• Very low on-state resistance

V

DSS = 150 V

• Fast switching

• Low thermal resistance

I

D = 73 A

R

DS(ON) ≤ 20 mΩ

GENERAL DESCRIPTION

PINNING

SOT429 (TO247)

SiliconMAX products use the latest

DESCRIPTION

Philips

Trench

technology

to

achieve

the

lowest

possible

1

gate

on-state

resistance

in

each

package at each voltage rating.

2

drain

Applications:-

3

source

• d.c. to d.c. converters

• switched mode power supplies

tab

drain

The PSMN020-150W is supplied in

the SOT429 (TO247) conventional

leaded package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

DSS

Drain-source voltage

T

j = 25 ˚C to 175˚C

-

150

V

DGR

Drain-gate voltage

T

j = 25 ˚C to 175˚C; RGS = 20 kΩ

-

150

V

GS

Gate-source voltage

-

± 20

V

I

D

Continuous drain current

T

mb = 25 ˚C

-

73

A

T

mb = 100 ˚C

-

51

A

I

DM

Pulsed drain current

T

mb = 25 ˚C

-

290

A

P

D

Total power dissipation

T

mb = 25 ˚C

-

300

W

T

j, Tstg

Operating junction and

- 55

175

˚C

storage temperature

AVALANCHE ENERGY LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

E

AS

Non-repetitive avalanche

Unclamped inductive load, I

AS = 73 A;

-

707

mJ

energy

t

p = 100 µs; Tj prior to avalanche = 25˚C;

V

DD ≤ 25 V; RGS = 50 Ω; VGS = 5 V; refer to

fig:15

I

AS

Non-repetitive avalanche

-

73

A

current

d

g

s

2

3

1

November 1999

1

Rev 1.000

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