Electronic Components Datasheet Search
  English  ▼

X  

Preview PDF HTML

PSMN020 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # PSMN020
Description  N-channel TrenchMOS횚 transistor
PDF  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PSMN020 Datasheet(HTML) 2 Page - NXP Semiconductors

  PSMN020 Datasheet HTML 1Page - NXP Semiconductors PSMN020 Datasheet HTML 2Page - NXP Semiconductors PSMN020 Datasheet HTML 3Page - NXP Semiconductors PSMN020 Datasheet HTML 4Page - NXP Semiconductors PSMN020 Datasheet HTML 5Page - NXP Semiconductors PSMN020 Datasheet HTML 6Page - NXP Semiconductors PSMN020 Datasheet HTML 7Page - NXP Semiconductors  
Zoom Inzoom in Zoom Outzoom out
 2 / 7 page
background image
Philips Semiconductors
Product specification
N-channel TrenchMOS
™ transistor
PSMN020-150W
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction
-
0.5
K/W
to mounting base
R
th j-a
Thermal resistance junction
in free air
45
-
K/W
to ambient
ELECTRICAL CHARACTERISTICS
T
j= 25˚C
unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA;
150
-
-
V
voltage
T
j = -55˚C
134
-
-
V
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
2.0
3.0
4.0
V
T
j = 175˚C
1.0
-
-
V
T
j = -55˚C
-
-
6
V
R
DS(ON)
Drain-source on-state
V
GS = 10 V; ID = 25 A
-
12
20
m
Ω
resistance
T
j = 175˚C
-
-
56
m
Ω
I
GSS
Gate source leakage current V
GS = ±10 V; VDS = 0 V
-
2
100
nA
I
DSS
Zero gate voltage drain
V
DS = 150 V; VGS = 0 V;
-
0.05
10
µA
current
T
j = 175˚C
-
-
500
µA
Q
g(tot)
Total gate charge
I
D = 73 A; VDD = 120 V; VGS = 10 V
-
227
-
nC
Q
gs
Gate-source charge
-
46
-
nC
Q
gd
Gate-drain (Miller) charge
-
91
-
nC
t
d on
Turn-on delay time
V
DD = 75 V; RD = 2.7 Ω;
-
34
-
ns
t
r
Turn-on rise time
V
GS = 10 V; RG = 5.6 Ω
-79
-
ns
t
d off
Turn-off delay time
Resistive load
-
233
-
ns
t
f
Turn-off fall time
-
101
-
ns
L
d
Internal drain inductance
Measured from tab to centre of die
-
3.5
-
nH
L
d
Internal drain inductance
Measured from drain lead to centre of die
-
4.5
-
nH
L
s
Internal source inductance
Measured from source lead to source
-
7.5
-
nH
bond pad
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
9537
-
pF
C
oss
Output capacitance
-
854
-
pF
C
rss
Feedback capacitance
-
380
-
pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
I
S
Continuous source current
-
-
73
A
(body diode)
I
SM
Pulsed source current (body
-
-
290
A
diode)
V
SD
Diode forward voltage
I
F = 25 A; VGS = 0 V
-
0.85
1.2
V
I
F = 75 A; VGS = 0 V
-
1.1
-
V
t
rr
Reverse recovery time
I
F = 20 A; -dIF/dt = 100 A/µs;
-
127
-
ns
Q
rr
Reverse recovery charge
V
GS = 0 V; VR = 30 V
-
1.0
-
µC
November 1999
2
Rev 1.000



Html Pages

1 2 3 4 5 6 7


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com