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M48Z128 Datasheet(PDF) 13 Page - STMicroelectronics

Part # M48Z128
Description  5.0V OR 3.3V, 1 Mbit (128 Kbit x 8) ZEROPOWER SRAM
PDF  21 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M48Z128 Datasheet(HTML) 13 Page - STMicroelectronics

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M48Z128, M48Z128Y, M48Z128V*
Data Retention Mode
With valid VCC applied, the M48Z128/Y/V oper-
ates as a conventional BYTEWIDEstatic RAM.
Should the supply voltage decay, the RAM will au-
tomatically power-fail deselect, write protecting it-
self tWP after VCC falls below VPFD. All outputs
become high impedance, and all inputs are treated
as “Don't care.”
If power fail detection occurs during a valid ac-
cess, the memory cycle continues to completion. If
the memory cycle fails to terminate within the time
tWP, write protection takes place. When VCC drops
below VSO, the control circuit switches power to
the internal energy source which preserves data.
The internal coin cell will maintain data in the
M48Z128/Y/V after the initial application of VCC for
an accumulated period of at least 10 years when
VCC is less than VSO. As system power returns
and VCC rises above VSO, the battery is discon-
nected, and the power supply is switched to exter-
nal VCC. Write protection continues for tER after
VCC reaches VPFD to allow for processor stabiliza-
tion. After tER, normal RAM operation can resume.
For more information on Battery Storage Life refer
to the Application Note AN1012.
Figure 11. Power Down/Up Mode AC Waveforms
Table 10. Power Down/Up AC Characteristics
Note: 1. Valid for Ambient Operating Temperature: TA = 0 to 70°C; VCC = 4.75 to 5.5V, 4.5 to 5.5V, or 3.0 to 3.6V (except where noted).
2. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200µs after VCC pass-
es VPFD (min).
3. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.
Symbol
Parameter(1)
Min
Max
Unit
tF
(2)
VPFD (max) to VPFD (min) VCC Fall Time
300
µs
tFB
(3)
VPFD (min) to VSS VCC Fall Time
M48Z128/Y
10
µs
M48Z128V
150
tR
VPFD (min) to VPFD (max) VCC Rise Time
10
µs
tRB
VSS to VPFD (min) VCC Rise Time
1µs
tWP
Write Protect Time
M48Z128/Y
40
150
µs
M48Z128V
40
250
tER
E Recovery Time
40
120
ms
AI01031
VCC
E
(PER CONTROL INPUT)
OUTPUTS
DON'T CARE
HIGH-Z
tF
tFB
tR
tRB
tWP
tDR
VALID
VALID
(PER CONTROL INPUT)
RECOGNIZED
RECOGNIZED
VPFD (max)
VPFD (min)
VSO
tER



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