PIC16C83 datasheet(95/117 Pages) MICROCHIP

95 / 117 page

Preliminary

DS30081F-page 95

PIC16C8X

Applicable Devices 83 R83 84 84A R84

13.0

ELECTRICAL CHARACTERISTICS FOR PIC16C83, PIC16CR83, PIC16C84A

AND PIC16CR84

Absolute Maximum Ratings †

Ambient temperature under bias.............................................................................................................-55

°C to +125°C

Storage temperature .............................................................................................................................. -65

°C to +150°C

Voltage on any pin with respect to VSS (except VDD and MCLR).................................................... -0.6V to (VDD + 0.6V)

Voltage on VDD with respect to VSS ............................................................................................................... 0 to +7.5V

Voltage on MCLR with respect to VSS (Note 2).................................................................................................0 to +14V

Total power dissipation (Note 1)...........................................................................................................................800 mW

Maximum current out of VSS pin ...........................................................................................................................150 mA

Maximum current into VDD pin ..............................................................................................................................100 mA

Input clamp current, IIK (VI < 0 or VI > VDD)

.....................................................................................................................± 20 mA

Output clamp current, IOK (V0 < 0 or V0 > VDD)

..............................................................................................................± 20 mA

Maximum output current sunk by any I/O pin..........................................................................................................25 mA

Maximum output current sourced by any I/O pin ....................................................................................................20 mA

Maximum current sunk by PORTA ..........................................................................................................................80 mA

Maximum current sourced by PORTA .....................................................................................................................50 mA

Maximum current sunk by PORTB........................................................................................................................150 mA

Maximum current sourced by PORTB...................................................................................................................100 mA

Note 1: Power dissipation is calculated as follows: Pdis = VDD x {IDD -

∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOl x IOL)

Note 2: Voltage spikes below VSS at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up. Thus,

a series resistor of 50-100

Ω should be used when applying a “low” level to the MCLR pin rather than pulling

this pin directly to VSS.

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operation listings of this speciﬁcation is not implied. Exposure to maximum rating conditions for

extended periods may affect device reliability.

Thi d

t d

ith F

M k

4 0 4

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