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18F452 Datasheet(PDF) 265 Page - Microchip Technology |
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18F452 Datasheet(HTML) 265 Page - Microchip Technology |
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265 / 332 page ![]() 2002 Microchip Technology Inc. DS39564B-page 263 PIC18FXX2 IDD Supply Current(2,4) (Continued) D010C PIC18LFXX2 — 10 25 mA EC, ECIO osc configurations VDD = 4.2V, -40 °C to +85°C D010C PIC18FXX2 — 10 25 mA EC, ECIO osc configurations VDD = 4.2V, -40 °C to +125°C D013 PIC18LFXX2 — — — .6 10 15 2 15 25 mA mA mA HS osc configuration FOSC = 4 MHz, VDD = 2.0V FOSC = 25 MHz, VDD = 5.5V HS + PLL osc configurations FOSC = 10 MHz, VDD = 5.5V D013 PIC18FXX2 — — 10 15 15 25 mA mA HS osc configuration FOSC = 25 MHz, VDD = 5.5V HS + PLL osc configurations FOSC = 10 MHz, VDD = 5.5V D014 PIC18LFXX2 — 15 55 µA Timer1 osc configuration FOSC = 32 kHz, VDD = 2.0V D014 PIC18FXX2 — — — — 200 250 µA µA Timer1 osc configuration FOSC = 32 kHz, VDD = 4.2V, -40 °C to +85°C FOSC = 32 kHz, VDD = 4.2V, -40 °C to +125°C IPD Power-down Current(3) D020 PIC18LFXX2 — — — .08 .1 3 .9 4 10 µA µA µA VDD = 2.0V, +25 °C VDD = 2.0V, -40 °C to +85°C VDD = 4.2V, -40 °C to +85°C D020 D021B PIC18FXX2 — — — .1 3 15 .9 10 25 µA µA µA VDD = 4.2V, +25 °C VDD = 4.2V, -40 °C to +85°C VDD = 4.2V, -40 °C to +125°C 22.1 DC Characteristics: PIC18FXX2 (Industrial, Extended) PIC18LFXX2 (Industrial) (Continued) PIC18LFXX2 (Industrial) Standard Operating Conditions (unless otherwise stated) Operating temperature -40°C ≤ TA ≤ +85°C for industrial PIC18FXX2 (Industrial, Extended) Standard Operating Conditions (unless otherwise stated) Operating temperature -40°C ≤ TA ≤ +85°C for industrial -40°C ≤ TA ≤ +125°C for extended Param No. Symbol Characteristic Min Typ Max Units Conditions Legend: Shading of rows is to assist in readability of the table. Note 1: This is the limit to which VDD can be lowered in SLEEP mode, or during a device RESET, without losing RAM data. 2: The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O pin loading and switching rate, oscillator type, internal code execution pattern and temperature, also have an impact on the current consumption. The test conditions for all IDD measurements in active Operation mode are: OSC1 = external square wave, from rail-to-rail; all I/O pins tri-stated, pulled to VDD MCLR = VDD; WDT enabled/disabled as specified. 3: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD or VSS, and all features that add delta current disabled (such as WDT, Timer1 Oscillator, BOR,...). 4: For RC osc configuration, current through REXT is not included. The current through the resistor can be estimated by the formula Ir = VDD/2REXT (mA) with REXT in kOhm. 5: The LVD and BOR modules share a large portion of circuitry. The ∆IBOR and ∆ILVD currents are not additive. Once one of these modules is enabled, the other may also be enabled without further penalty. |
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