| Electronic Components Datasheet Search |
|
UPC2747 Datasheet(PDF) 1 Page - NEC |
|
|
|||||||||||||||||||||||||||||
UPC2747 Datasheet(HTML) 1 Page - NEC |
|
1 / 5 page ![]() • LOW VOLTAGE - LOW CURRENT: 5 mA at 3 V • LOW POWER CONSUMPTION: 15 mW TYP • SUPER SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE FEATURES DESCRIPTION UPC2747T The UPC2747T is a Silicon Monolithic integrated circuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz. This amplifier was designed for 900 MHz receivers in cellular and cordless telephone applications. Operating on a 3 volt supply (1.8 volt minimum) this IC is ideally suited for hand- held, portable designs. NEC's stringent quality assurance and test procedures en- sure the highest reliability and performance. NOISE FIGURE AND GAIN vs. FREQUENCY VCC = 3.0 V, ICC = 5 mA PART NUMBER UPC2747T PACKAGE OUTLINE TO6 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICC Circuit Current (no signal) VCC = 3.0 V mA 3.8 5.0 7.0 VCC = 1.8 V mA 3.0 GS Small Signal Gain, f = 900 MHz, VCC = 3.0 V dB 9 12 14 f = 900 MHz, VCC = 1.8 V dB 5.5 fU1 Upper Limit Operating Frequency, VCC = 3.0 V GHz 1.5 1.8 VCC = 1.8 V GHz 1.8 PSAT Saturated Output Power, f = 900 MHz, , VCC = 3.0 V dBm -9.5 -7 f = 900 MHz, VCC = 1.8 V dBm -14 NF Noise Figure, f = 900 MHz, VCC = 3.0 V dB 3.3 4.5 f = 900 MHz, VCC = 1.8 V dB 5.2 RLIN Input Return Loss, f = 900 MHz, VCC = 3.0 V dB 11 14 f = 900 MHz, VCC = 1.8 V dB 11 RLOUT Output Return Loss, f = 900 MHz, VCC = 3.0 V dB 7 10 f = 900 mHz, VCC = 1.8 V dB 13 ISOL Isolation, f = 900 MHz, VCC = 3.0 V dB 35 40 f = 900 MHz, VCC = 1.8 V dB 34 OIP3 SSB Output Third Order Intercept , f1 = 500 MHz, f2 = 510 MHz, VCC = 3.0 V dBm -3 f1 = 900 MHz, f2 = 902 MHz, VCC = 3.0 V dBm -3 f1 = 1000 MHz, f2 = 1010 MHz, VCC = 3.0 V dBm -2 f1 = 900 MHz, f2 = 902 MHz, VCC = 1.8 V dBm -10 RTH (J-A) Thermal Resistance (Junction to Ambient) Free Air °C/W 620 Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB °C/W 230 ELECTRICAL CHARACTERISTICS (TA = 25°C, ZL = ZS = 50 Ω) Frequency, f (MHz) 0 1000 2000 GS NF 14 12 10 8 4.5 4.0 3.5 3.0 3 V, 900 MHz Si MMIC AMPLIFIER Note: 1.The gain at fU is 3 dB down from the gain at 100 MHz. California Eastern Laboratories |
Similar Part No. - UPC2747 |
|
Similar Description - UPC2747 |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |