Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

V

−0.3V to 15V

V

−0.3V to 15V

IN/INB to IN_REF

−0.3V to 15V

IN_REF to V

EE

−0.3V to 5V

Storage Temperature Range

−55˚C to +150˚C

Maximum Junction Temperature

+150˚C

Operating Junction Temperature

−40˚C+125˚C

ESD Rating

2kV

put, unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

SUPPLY

V

CC

V

V

3.5

14

V

UVLO

V

V

2.4

3.0

3.5

V

V

CCH

V

230

mV

I

CC

V

1.0

2.0

mA

CONTROL INPUTS

V

IH

Logic High

1.75

2.3

V

V

IL

Logic low

0.8

1.35

V

HYS

Input Hysteresis

400

mV

I

IL

Input Current Low

IN = INB = 0V

-1

0.1

1

µA

I

IH

Input Current High

IN = INB = V

CC

-1

0.1

1

µA

OUTPUT DRIVER

R

OH

Output Resistance High

I

30

50

Ω

R

OL

Output Resistance Low

I

1.4

2.5

Ω

I

SOURCE

Peak Source Current

OUT = V

current

3A

I

SINK

Peak Sink Current

OUT = V

current

7A

SWITCHING CHARACTERISTICS

td1

Propagation Delay Time Low to

High,

IN/ INB rising ( IN to OUT)

C

25

40

ns

td2

Propagation Delay Time High to

Low,

IN / INB falling (IN to OUT)

C

25

40

ns

tr

Rise time

C

14

ns

tf

Fall time

C

12

ns

LATCHUP PROTECTION

AEC –Q100, METHOD 004

T

500

mA

Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the device

is intended to be functional. For guaranteed specifications and test conditions, see the Electrical Characteristics.

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