LM5112

Tiny 7A MOSFET Gate Driver

General Description

The LM5112 MOSFET gate driver provides high peak gate

drive current in the tiny LLP-6 package (SOT23 equivalent

footprint) with improved package power dissipation required

for high frequency operation. The compound output driver

stage includes MOS and bipolar transistors operating in

parallel that together sink more than 7A peak from capacitive

loads. Combining the unique characteristics of MOS and

bipolar devices reduces drive current variation with voltage

and temperature. Under-voltage lockout protection is pro-

vided to prevent damage to the MOSFET due to insufficient

gate turn-on voltage. The LM5112 provides both inverting

and non-inverting inputs to satisfy requirements for inverting

and non-inverting gate drive with a single device type.

Features

n

Compound CMOS and bipolar outputs reduce output

current variation

n

7A sink/3A source current

n

Fast propagation times (25 ns typical)

n

Fast rise and fall times (14 ns/12 ns rise/fall with 2 nF

load)

n

Inverting and non-inverting inputs provide either

configuration with a single device

n

Supply rail under-voltage lockout protection

n

Dedicated input ground (IN_REF) for split supply or

single supply operation

n

Power Enhanced 6-pin LLP package (3.0mm x 3.0mm)

n

Output swings from V

relative to input ground

Block Diagram

20066801

Block Diagram of LM5112

October 2004

© 2004 National Semiconductor Corporation

DS200668

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