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LMD18400 Datasheet(PDF) 8 Page - National Semiconductor (TI) |
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LMD18400 Datasheet(HTML) 8 Page - National Semiconductor (TI) |
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8 / 18 page ![]() Applications Information (Continued) PROTECTION CIRCUITRY The LMD18400 has extensive protection circuitry built in With any power device protection against excessive volt- age current and temperature conditions is essential To achieve a ‘‘fail-safe’’ system implementation the loads are deactivated automatically by the LMD18400 in the event of any detected overvoltage or over-temperature fault condi- tions Voltage Protection The VCC supply can range from b05V to a60 VDC without any damage to the LMD18400 The CMOS logic circuitry is biased from an internal 51V regulator which protects these lower voltage transistors from the higher VCC potentials In order to protect the loads connected to the switch outputs however an overvoltage shutdown circuit is employed Should the VCC potential exceed 35V all of the switches are turned OFF thereby disconnecting the loads This 35V threshold has 750 mV of hysteresis to prevent potential os- cillations Additionally there is an undervoltage lockout feature built in With VCC less than 5V it becomes uncertain whether the logic circuitry can hold the switches in their commanded state To avoid this uncertainty all of the switches are turned OFF when VCC drops below approximately 5V Figure 3 illustrates the shutoff of an output during a 0V to 80V VCC supply transient OverUnder Voltage Shutdown TLH11026 – 12 FIGURE 3 OvervoltageUndervoltage Shutdown The LMD18400 has been designed to drive all types of loads When driving a ground referenced inductive load such as a relay or solenoid the voltage across the load will reverse in polarity as the field in the inductor collapses when the power switch is turned OFF This will pull the output pin of the LMD18400 below ground This negative transient voltage is clamped at approximately b5V to protect the IC This clamping action is not done with diodes but rather the power DMOS switch turning back on momentarily to con- duct the inductor current as it de-energizes as shown in Figure 4 TLH11026 – 13 FIGURE 4 Turn-OFF Conditions with an Inductive Load When the output inductance produces a negative voltage the gate of the DMOS transistor is clamped at 0V At b 35V the source of the power device is less than the gate by enough to cause the switch to turn ON again During this negative transient condition the power limiting circuitry to protect the switch is disabled due to the gate being held at 0V The maximum current during this clamping interval which is equal to the steady state ON current through the inductor should be kept less than 1A Another concern dur- ing this interval has to do with the size of an inductive load and the amount of time required to de-energize it With larg- er inductors it may be possible for the additional power dis- sipation to cause the die temperaure to exceed the thermal shutdown limit If this occurs all of the other switches will turn OFF momentarily (see section on Thermal Manage- ment) Power Limiting The LMD18400 utilizes a true instantaneous power limit cir- cuit rather than simple current limiting to protect each switch This provides a higher transient current capability while still maintaining a safe power dissipation level The power dissipation in each switch (the product of the Drain-to Source voltage and the output current Vds c IOUT) is con- http www nationalcom 8 |
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