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LMD18400 Datasheet(PDF) 13 Page - National Semiconductor (TI) |
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LMD18400 Datasheet(HTML) 13 Page - National Semiconductor (TI) |
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13 / 18 page ![]() Applications Information (Continued) TLH11026 – 23 FIGURE 13 Switching an Inductive Load When switched ON the worst case power dissipation is PD(ON) e IPeak2 c RON where IPeak e VCC RON a RS The steady-state ON current of the inductor should be kept less than 1A per power switch The additional power dissipation during turn-off as the in- ductor is de-energized and the voltage across the inductor is clamped to b5V can be found by PD(OFF) e (VCC a 5V) c IPeak 2 for the time interval tClamp which is the time required for the inductor current to fall to zero tClamp e IPeak c L 5V The size of the inductor will determine the time duration for this additional power dissipation interval Even though the peak current is kept less than 1A the switch during this interval will see a voltage across it of VCC a 5V with no power limit protection If the inductor is too large the time interval may be long enough to heat the die temperature to a 170 C thereby shutting OFF all other loads on the pack- age The total average power dissipation during a full ONOFF switching cycle of an inductive load will be PD(tot) e IPeak2 RON tON a IPeak2L(VCC a 5V) 10 ( 1 tON a tOFF Due to the common cut-off of all loads forced by thermal shutdown the thermal time constants of the package be- come a concern Figure 14 provides an indication of the time it takes to heat the die to thermal shutdown with a step increase in package power dissipation from an initial junc- tion temperature of a25 C This data was measured using a PC board layout providing a thermal resistance from junc- tion to ambient of approximately 35 CW Less heatsinking will of course result in faster thermal shutdown of the pow- er switches TLH11026 – 24 FIGURE 14 Approximate time required for the die to reach the 170 C thermal shutdown point from 25 C for different total package power dissipation levels http www nationalcom 13 |
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