SIS413DN datasheet(5/13 Pages) VISHAY

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Vishay Siliconix

SiS413DN

Document Number: 63262

S13-0632-Rev. A, 25-Mar-13

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

100

125

150

C - Case Temperature (

°C)

Limited by Package

Power, Junction-to-Case

255075

100

125

150

TC - Case Temperature (°C)

Power, Junction-to-Ambient

0.0

0.4

0.8

1.2

1.6

2.0

100

125

150

TA - Ambient Temperature (°C)

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