SIS413DN datasheet(4/13 Pages) VISHAY

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Vishay Siliconix

SiS413DN

www.vishay.com

Document Number: 63262

S13-0632-Rev. A, 25-Mar-13

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

0.001

0.01

0.1

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

SD - Source-to-Drain Voltage (V)

J = 150

°C

J = 25 °C

- 0.5

- 0.2

0.1

0.4

0.7

1.0

- 50

- 25

100

125

150

J - Temperature (

°C)

D = 250 μA

D = 1 mA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.000

0.010

0.020

0.030

0.040

0.050

GS - Gate-to-Source Voltage (V)

J = 125

°C

J = 25

°C

D = 15 A

100

0.001

0.01

0.1

Time (s)

Safe Operating Area

0.01

0.1

100

0.01

0.1

100

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

100 μs

100 ms

Limited by R

DS(on)*

1 ms

DM Limited

A = 25

°C

Single Pulse

BVDSS Limited

10 ms

10 s

1 s

D Limited

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