Vishay Siliconix

SiS413DN

Document Number: 63262

S13-0632-Rev. A, 25-Mar-13

www.vishay.com

1

This document is subject to change without notice.

P-Channel 30 V (D-S) MOSFET

FEATURES

•

•

Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

•

Load Switch

•

Power Management

•

Mobile Computing

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under steady state conditions is 81 °C/W.

d. Package limited.

per (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is

not required to ensure adequate bottom side solder interconnection.

f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

PRODUCT SUMMARY

- 30

35.4 nC

1

2

3

4

5

6

7

8

S

S

S

G

D

D

D

D

3.30 mm

3.30 mm

Bottom View

Ordering Information:

SiS413DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

S

G

D

P-Channel MOSFET

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

- 30

V

Gate-Source Voltage

± 20

A

Pulsed Drain Current (t = 300 µs)

- 70

Continuous Source-Drain Diode Current

Avalanche Current

L = 0.1 mH

- 20

Single-Pulse Avalanche Energy

20

mJ

Maximum Power Dissipation

52

W

33

Operating Junction and Storage Temperature Range

- 55 to 150

°C

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t

10 s

26

33

°C/W

Maximum Junction-to-Case

Steady State

1.9

2.4