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SIE804DF Datasheet(PDF) 1 Page - Vishay Siliconix

Part # SIE804DF
Description  N-Channel 150-V (D-S) MOSFET
PDF  7 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIE804DF Datasheet(HTML) 1 Page - Vishay Siliconix

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Vishay Siliconix
SiE804DF
New Product
Document Number: 69091
S09-0143-Rev. A, 02-Feb-09
www.vishay.com
1
N-Channel 150-V (D-S) MOSFET
FEATURES
•
Halogen-free According to IEC 61249-2-21
•
TrenchFET® Power MOSFET
•
Ultra Low Thermal Resistance Using
Top-Exposed PolarPAK® Package for
Double-Sided Cooling
•
Leadframe-Based New Encapsulated Package
- Die Not Exposed
- Same Layout Regardless of Die Size, > 100 V
• 100 % Rg and UIS Tested
APPLICATIONS
•
Primary Side Switch
•
Half-Bridge
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
a
Qg (Typ.)
150
0.038 at VGS = 10 V
37
46 nC
0.040 at VGS = 6 V
36
Package Drawing
www.vishay.com/doc?64713
Ordering Information: SiE804DF-T1-GE3 (Lead (Pb)-free and Halogen-free)
Top View
Bottom View
Top surface is connected to pins 1, 5, 6, and 10
PolarPAK
10
D
S
S
G
D
D
S
S
G
D
1
43
2
5
67
8
9
D
DS
G
D
5
4
3
2
1
6
7
8
9
10
For Related Documents
www.vishay.com/ppg?69091
N-Channel MOSFET
G
D
S
Notes:
a. TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
150
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
37
A
TC = 70 °C
29
TA = 25 °C
7.5b, c
TA = 70 °C
6b, c
Pulsed Drain Current
IDM
50
Continuous Source-Drain Diode Current
TC = 25 °C
IS
37
TA = 25 °C
4.3b, c
Single Pulse Avalanche Current
L = 0.1 mH
IAS
25
Single Pulse Avalanche Energy
EAS
62
mJ
Maximum Power Dissipation
TC = 25 °C
PD
125
W
TC = 70 °C
80
TA = 25 °C
5.2b, c
TA = 70 °C
3.3b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)d, e
260


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