SIE804DF datasheet(3/7 Pages) VISHAY

3 / 7 page

Document Number: 69091

S09-0143-Rev. A, 02-Feb-09

www.vishay.com

Vishay Siliconix

SiE804DF

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0.0

0.4

0.8

1.2

1.6

2.0

VGS =10thru 4 V

VGS =3 V

VDS - Drain-to-Source Voltage (V)

0.015

0.020

0.025

0.030

0.035

0.040

0.045

VGS =6 V

VGS =10 V

ID - Drain Current (A)

020

ID =7.6 A

VDS =120 V

VDS =75 V

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

012

TC = 25 °C

TC = 125 °C

TC =- 55 °C

VGS - Gate-to-Source Voltage (V)

Crss

1000

2000

3000

4000

5000

020

80100

Ciss

Coss

VDS - Drain-to-Source Voltage (V)

0.4

0.8

1.2

1.6

2.0

2.4

- 50

- 25

100

125

150

VGS =6 V;10 V

ID =7.6 A

TJ -Junction Temperature (°C)

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