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AM29LV640MU Datasheet(PDF) 52 Page - Advanced Micro Devices |
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AM29LV640MU Datasheet(HTML) 52 Page - Advanced Micro Devices |
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52 / 58 page ![]() June 12, 2003 Am29LV640MU 51 AD V A NCE INF O R M A T IO N ERASE AND PROGRAMMING PERFORMANCE Notes: 1. Typical program and erase times assume the following conditions: 25 °C, 3.0 V V CC. Programming specifications assume that all bits are programmed to 00h. 2. Maximum values are measured at VCC = 3.0 V, worst case temperature. Maximum values are valid up to and including 100,000 program/erase cycles. 3. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer. 4. For 1-16 words or 1-32 bytes programmed ina single write buffer programming operation. 5. Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer operation. 6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure. 7. System-level overhead is the time required to execute the command sequence(s) for the program command. See Tables 12 and 11 for further information on command definitions. 8. The device has a minimum erase and program cycle endurance of 100,000 cycles. LATCHUP CHARACTERISTICS Note: Includes all pins except V CC. Test conditions: VCC = 3.0 V, one pin at a time. Parameter Typ (Note 1) Max (Note 2) Unit Comments Sector Erase Time 0.5 15 sec Chip Erase Time 32 128 sec Single Word/Byte Program Time (Note 3) Byte 100 TBD µs Word 100 TBD µs Accelerated Single Word/Byte Program Time (Note 3) Byte 90 TBD µs Word 90 TBD µs Total Write Buffer Program Time (Note 4) 352 TBD µs Effective Write Buffer Program Time (Note 5) Per Byte 11 TBD µs Per Word 22 TBD µs Total Accelerated Effective Write Buffer Program Time (Note 4) 282 TBD µs Effective Accelerated Write Buffer PRogram Time (Note 4) Byte 8.8 TBD µs Description Min Max Input voltage with respect to V SS on all pins except I/O pins (including A9, OE#, and RESET#) –1.0 V 12.5 V Input voltage with respect to V SS on all I/O pins –1.0 V V CC + 1.0 V V CC Current –100 mA +100 mA |
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