VO3020, VO3021, VO3022, VO3023

www.vishay.com

Vishay Semiconductors

Rev. 1.2, 09-Sep-13

2

Document Number: 84132

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Notes

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

hole devices (DIP).

Fig. 1 - Total Power Dissipation vs. Ambient Temperature

(IR-Diode)

Fig. 2 - Total Power Dissipation vs. Ambient Temperature

(Phototriac)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

6V

Forward current

50

mA

Peak surge current

100 μs, 200 pps

0.5

A

Power dissipation

70

mW

OUTPUT

Peak off-state voltage

400

V

RMS on-state current

1A

Peak non-repetitive surge current

PW = 100 ms, 120 pps

1A

Power dissipation

300

mW

COUPLER

Isolation voltage

t = 1 min

5000

Total power dissipation

330

mW

Storage temperature range

- 55 to + 150

°C

Ambient temperature

- 40 to + 100

°C

2 mm from case, t < 10 s

260

°C

Junction temperature

125

°C

0

20

40

60

80

100

0

25

50

75

100

125

T

IR-diode

0

50

100

150

200

250

300

350

0

25

50

75

100

125

T

Phototriac