STTH1L06-Y datasheet(2/9 Pages) STMICROELECTRONICS

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Characteristics

STTH1L06-Y

2/9

DocID026707 Rev 1

Characteristics

To evaluate the conduction losses use the following equation:

P = 0.95 x IF(AV) + 0.20 x IF2(RMS)

Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

Tj = -40 to +175 °C

600

IF(AV)

Average forward current, square waveform

TL = 145 °C δ = 0.5

IFSM

Forward Surge current

tp = 10 ms

Tstg

Storage temperature range

-65 to + 175

°C

(1)

condition to avoid thermal runaway for a diode on its own heatsink

Operating temperature range

-40 to + 175

°C

Table 3. Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-l)

Junction to lead

°C/W

Table 4. Static electrical characteristics

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

IR(1)

1. Pulse test: tp = 5 ms, δ < 2%

Reverse leakage current

Tj = 25 °C

VR = 600 V

µA

Tj = 150 °C

VF(2)

2. Pulse test: tp = 380 µs, δ < 2%

Forward voltage drop

Tj = 25 °C

IF = 1 A

1.4

Tj = 150 °C

0.9

1.15

Table 5. Dynamic electrical characteristics

Symbol

Parameter

Tests conditions

Min. Typ. Max. Unit

trr

Reverse recovery time

Tj = 25 °C

IF = 1 A, dIF/dt = -50 A/µs

VR = 30 V

tfr

Forward recovery time

Tj = 25 °C

IF = 2 A, dIF/dt = 100 A/µs,

VFR = 3.5 V

VFP

Forward recovery

voltage

IF = 2 A, dIF/dt = 100 A/µs

dPtot

dTj

Rth(j-a)

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