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STTH8T06 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STTH8T06
Description  Very low switching losses
PDF  9 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH8T06 Datasheet(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
April 2013
DocID023406 Rev 3
1/9
9
STTH8T06
600 V tandem extra fast diode
Datasheet
production data
Features
 High voltage rectifier
 Tandem diodes in series
 Very low switching losses
 Insulated device with internal ceramic
 Equal thermal conditions for both 300 V diodes
 Static and dynamic equilibrium of internal
diodes are warranted by design
 Insulated package:
– Capacitance: 7 pF
– Insulated voltage: 2500 V rms
Description
This device is part of ST's second generation of
600 V tandem diodes. It has ultralow switching-
losses with a minimized QRR (6 nC) that makes it
perfect for use in circuits working in hard-
switching mode. In particular the VF/QRR trade-off
positions this device between standard ultrafast
diodes and silicon-carbide Schottky rectifiers in
terms of price/performance ratio.
The device offers a new positioning giving more
flexibility to power-circuit designers looking for
good performance while still respecting cost
constraints.
Featuring ST's Turbo 2 600 V technology, the
device is particularly suited as a boost diode in
continuous conduction mode power factor
correction circuits.
Table 1. Device summary
Symbol
Value
IF(AV)
8 A
VRRM
600 V
trr (typ)
15 ns
IRM (typ)
2.3 A
VF (typ)
2.05 V
IFRM)
40 A
Tj (max)
175 °C
TO-220AC ins
STTH
DI
8T06
A
A
K
K
www.st.com


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