STTH8T06 datasheet(2/9 Pages) STMICROELECTRONICS

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Characteristics

STTH8T06

2/9

DocID023406 Rev 3

Characteristics

To evaluate the conduction losses use the following equation:

P = 1.75 x IF(AV) + 0.10 IF

(RMS)

Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

Tj from 25 to 150 °C

600

Tj = -40 °C

550

IF(RMS) Forward rms current

IF(AV)

Average forward current,

 = 0.5

Tc = 100 °C

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

IFRM

Repetitive peak forward current

Tc = 100 °C,  = 0.1

Tstg

Storage temperature range

-65 to +175

°C

Operating junction temperature

-40 to +175

°C

Table 3. Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

2.8

°C/W

Table 4. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

µA

Tj = 125 °C

300

(2)

Forward voltage drop

Tj = 25 °C

IF = 8 A

2.95

Tj = 150 °C

2.05

2.55

1. Pulse test: tp = 5 ms,  < 2%

2. Pulse test: tp = 380 µs,  < 2%

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